SYNTHESIS OF ANTIMONY DOPED ZINC OXIDE THIN FILMS USING SOL-GEL DEPOSITION TECHNIQUE

Abstract

Sol-gel technique was successfully used to deposit antimony zinc oxide (Sb:ZnO) thin films on the pre-treated substrate at 60^oC. The deposition time and dopant concentration were varied and its effect on the structural, morphological, compositional and optical properties of the films were examined using X-ray diffraction, Scanning electron microscopy, Energy dispersive X-ray and spectrophotometer respectively. The optical results showed that the deposited films have high absorbance in Ultra Violet region which decrease towards the Near Infra-red region. Energy dispersive X-ray results confirmed that Antimony, Zinc and Oxygen were deposited. XRD result revealed that increase in dip time and dopant concentration led to increase in average crystallite size and improved structure. Dislocation densities and microstrain values decreased with increase in dip time and dopant concentration. X-ray diffraction result revealed hexagon phase of zinc oxide with C-axis orientation. The films have wide energy bandgap which is used for optoelectronic and thermoelectric device fabrication. The grown films have high absorbance in the ultra violet region so are good materials for window coating in the temperate regions of the world, (like in Nigeria) because all the harmful ultra violet rays will be absorbed by such films when used to coat the windows. This is a good substitute of the conventional costly air conditioner.